HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua

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FAIRCHILD

仙童半导体

OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT

DESCRIPTION The 4N38, 4N38A series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES ● Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part

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ISOCOM

英国安数光

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

Photocoupler These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. FEATURES • Switching Time - Typ. 3㎲ • Collector-Emitter Voltage : Min.80V • Current Transfer Ratio : Typ.100 (at IF=10mA, VCE=10V) • Electrical Isolati

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KODENSHI

可天士

Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)

Photocoupler These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package. FEATURES • Switching Time - Typ. 3㎲ • Collector-Emitter Voltage : Min.80V • Current Transfer Ratio : Typ.100 (at IF=10mA, VCE=10V) • Electrical Isolati

文件：191.96 Kbytes 页数：3 Pages

KODENSHI

可天士