首页 >4N35其他被动元件>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

K4N35

Photocoupler(ThesePhotocouplersconsistofaGalliumArsenideInfraredEmitting)

ThesePhotocouplersconsistofaGalliumArsenideInfraredEmittingDiodeandaSiliconNPNPhototransistorin6-pinpackage. FEATURES •SwitchingTime-Typ.3ms •Collector-EmitterVoltage:Min.30V •CurrentTransferRatio:Typ.100(atIF=10mA,VCE=10V) •ElectricalIsolation

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

LTV4N35

PropertyofLite-OnOnly

Features •Highcurrenttransferratio(CTR:MIN.100atIF=10mA,VCE=10V) •Responsetime(ton:TYP,3satVCE=10V,IC=2mA,RL=100) •Input-outputisolationvoltage: LTV-4N35(Viso:3,550Vrms) LTV-4N37(Viso:1,550Vrms) •ULapproved(No.E113898) •TUVapproved(No.R9653630) •

LITEONLite-On Technology Corporation

光宝科技光宝科技股份有限公司

LTV-4N35

PropertyofLite-OnOnly

Features •Highcurrenttransferratio(CTR:MIN.100atIF=10mA,VCE=10V) •Responsetime(ton:TYP,3satVCE=10V,IC=2mA,RL=100) •Input-outputisolationvoltage: LTV-4N35(Viso:3,550Vrms) LTV-4N37(Viso:1,550Vrms) •ULapproved(No.E113898) •TUVapproved(No.R9653630) •

LITEONLite-On Technology Corporation

光宝科技光宝科技股份有限公司

LTV-4N35M

PropertyofLite-OnOnly

Features •Highcurrenttransferratio(CTR:MIN.100atIF=10mA,VCE=10V) •Responsetime(ton:TYP,3satVCE=10V,IC=2mA,RL=100) •Input-outputisolationvoltage: LTV-4N35(Viso:3,550Vrms) LTV-4N37(Viso:1,550Vrms) •ULapproved(No.E113898) •TUVapproved(No.R9653630) •

LITEONLite-On Technology Corporation

光宝科技光宝科技股份有限公司

LTV-4N35S

PropertyofLite-OnOnly

Features •Highcurrenttransferratio(CTR:MIN.100atIF=10mA,VCE=10V) •Responsetime(ton:TYP,3satVCE=10V,IC=2mA,RL=100) •Input-outputisolationvoltage: LTV-4N35(Viso:3,550Vrms) LTV-4N37(Viso:1,550Vrms) •ULapproved(No.E113898) •TUVapproved(No.R9653630) •

LITEONLite-On Technology Corporation

光宝科技光宝科技股份有限公司

LTV-4N35S-TA

PropertyofLite-OnOnly

Features •Highcurrenttransferratio(CTR:MIN.100atIF=10mA,VCE=10V) •Responsetime(ton:TYP,3satVCE=10V,IC=2mA,RL=100) •Input-outputisolationvoltage: LTV-4N35(Viso:3,550Vrms) LTV-4N37(Viso:1,550Vrms) •ULapproved(No.E113898) •TUVapproved(No.R9653630) •

LITEONLite-On Technology Corporation

光宝科技光宝科技股份有限公司

MTP4N35

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

OPIA4N35

SMDandSOPPackages

TTELECTT Electronics.

TT电子公司梯梯电子集成制造服务(苏州)有限公司

PC4N35V

GENERALPURPOSETYPEPHOTOCOUPLER

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

RFM4N35

4A,350Vand400V,2.000Ohm,N-ChannelPowerMOSFETs

TheseareN-channelenhancement-modesilicon-gatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drivepower.These

Intersil

Intersil Corporation

供应商型号品牌批号封装库存备注价格