丝印：4H3L40；Package：SOT1210；N-channel 40 V, 4.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 95 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Avala

文件：304.65 Kbytes 页数：12 Pages

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丝印：4H3S40；Package：SOT1210；N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 95 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Av

文件：303.75 Kbytes 页数：12 Pages

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Silicon Power Rectifiers

文件：1.03081 Mbytes 页数：2 Pages

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Edal Series F power rectifiers are stud mounted DO-5 packages. Because the silicon junction is carefully fitted within a glass-to-metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental conditions. The series F power rectifiers

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Plug-in Signal Conditioners M-UNIT

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