Silicon N-Channel Power MOS FET Array

Silicon N-Channel Power MOS FET Array Features • Low on-resistance RDS(on) ≤0.06 , VGS = 10 V, ID= 5 A RDS(on) ≤0.075 , VGS = 4 V, ID= 5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for

文件：52.89 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A • 4V gate drive devices. • High density mounting

文件：53.04 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司

TRANSFORMER SITAS

General technical data Product designation transformer SITAS Product brand name SIDAC Operating apparent output rated value V·A 500 Efficiency 0.91 Connection method for transformers Ii0 Certificate of suitability CE / cRUus Product function ● Temperature monitoring No ● Insulation monito

文件：132.61 Kbytes 页数：3 Pages

SIEMENS

西门子

TRANSFORMER SITAS

TRANSFORMER SITAS; PHASES:1; PN/PN(S6)(KVA):1 /5; UPRI(V):400+/-5; USEC(V):230; ISEC(A):4,35; F(HZ):50 60; VECTOR GR./SHIELD WNG.:II0 /0; TA/ISOKL:40 /B; IP00; TYPE OF TERMINALS:SCREW/TAB CONNECTION; INSTALLATION:SCREW; EN 61558-2-2, -2-4 >UL/CSARECOGNIZEDCONTROL CIRCUIT TRANSFORMERISO

文件：132.59 Kbytes 页数：3 Pages

SIEMENS

西门子

OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS

Independent Registers for A and B Buses Multiplexed Real-Time and Stored Data Choice of True or Inverting Data Paths Choice of 3-State or Open-Collector Outputs Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK), and Standard Plastic (NT) and Ceramic (J

文件：462.32 Kbytes 页数：25 Pages

TI

德州仪器

SNAP ACTION PRECISION POSITION SWITCHES (RATED 4 AMPS @ 28VDC)

Features • Qualified per MIL-PRF-8805, Enclosure Symbol 5 • Hermetically sealed with dry nitrogen gas backfill • Proven snap-action switching, reliable performance and long life • Excellent shock and vibration resistance • Switching up to 4 amps • Optimal for low level circuits • Temperatur

文件：8.56442 Mbytes 页数：17 Pages

SENSATA

森萨塔

Vane operated position sensor

PRINCIPLE OF OPERATION AV vane sensors are operated by passing a ferrous vane through the gap between the Hall sensor and the magnet, shunting the magnetic flux away from the sensor.

文件：76.26 Kbytes 页数：1 Pages

HONEYWELL

霍尼韦尔

Vane operated position sensor

PRINCIPLE OF OPERATION AV vane sensors are operated by passing a ferrous vane through the gap between the Hall sensor and the magnet, shunting the magnetic flux away from the sensor.

文件：76.26 Kbytes 页数：1 Pages

HONEYWELL

霍尼韦尔

Vane operated position sensor

PRINCIPLE OF OPERATION AV vane sensors are operated by passing a ferrous vane through the gap between the Hall sensor and the magnet, shunting the magnetic flux away from the sensor.

文件：76.26 Kbytes 页数：1 Pages

HONEYWELL

霍尼韦尔

Vane operated position sensor

PRINCIPLE OF OPERATION AV vane sensors are operated by passing a ferrous vane through the gap between the Hall sensor and the magnet, shunting the magnetic flux away from the sensor.

文件：76.26 Kbytes 页数：1 Pages

HONEYWELL

霍尼韦尔