丝印：4A；Package：SOT-89；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：4A；Package：DFN2020MD-6；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Side wettable flanks for o

文件：297.7 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：4A；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4A；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4A；Package：DFN1006-2L；SMD Schottky Barrier Diodes

Features - Low forward voltage drop. - Very small SMD package.

文件：470.06 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：4A；Package：PG-TSDSON-8-39；OptiMOSTM 7 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avala

文件：2.94969 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：4A；Package：SOD-123；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：4A；Package：WDFN8；Buck Converter - Synchronous 3 MHz, 2 A

The NCP/NCV6324, a family of synchronous buck converters, which is optimized to supply different sub systems of portable applications powered by one cell Li−ion or three cell Alkaline/NiCd/ NiMH batteries. The devices are able to deliver up to 2 A on an external adjustable voltage. Operation w

文件：533.05 Kbytes 页数：17 Pages

ONSEMI

安森美半导体

丝印：4A；Package：SOD882；Schottky barrier diode

Features * Average forward current: lay)

文件：617.07 Kbytes 页数：2 Pages

TECHPUBLIC

台舟电子

丝印：4A；Package：DSN1006-2；40 V, 1 A low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package. 2. Features and benefits • Average forward current: I

文件：700.77 Kbytes 页数：14 Pages

NEXPERIA

安世