丝印：478L；Package：WDFN8；MOSFET ??Power, Single N-Channel 40 V, 14 m, 26 A

文件：207.28 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：478L；Package：WDFN8；MOSFET ??Power, Single N-Channel 40 V, 14 m, 26 A

文件：208.05 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：478LWF；Package：DFN8；Power MOSFET 40 V, 14.5 m, 29 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：179.95 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Standard 2000 hrs

文件：399.86 Kbytes 页数：6 Pages

ILLINOISCAPACITOR

Multiple case sizes - High voltage ??High Current

文件：394.3 Kbytes 页数：6 Pages

ILLINOISCAPACITOR

Multiple Case Sizes - High Voltage ??High Current

文件：551.11 Kbytes 页数：6 Pages

ILLINOISCAPACITOR

SNAP-IN / SNAP MOUNT

文件：128.289 Kbytes 页数：1 Pages

ILLINOISCAPACITOR

SNAP-IN / SNAP MOUNT

文件：129.789 Kbytes 页数：1 Pages

ILLINOISCAPACITOR

Multiple case sizes - High voltage ??High Current

文件：394.3 Kbytes 页数：6 Pages

ILLINOISCAPACITOR

Multiple Case Sizes - High Voltage ??High Current

文件：551.11 Kbytes 页数：6 Pages

ILLINOISCAPACITOR