PJQ4602_R1_00001

Marking：4602；Package：DFN3030B-8L；30V Complementary Enhancement Mode MOSFET

Features Highswitchingspeed Improveddv/dtcapability LowGateCharge Lowreversetransfercapacitance LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

PJQ4606_R1_00001

Marking：4606；Package：DFN3030B-8L；30V Complementary Enhancement Mode MOSFET

Features Highswitchingspeed Improveddv/dtcapability LowGateCharge Lowreversetransfercapacitance LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

PSMD460N15NS1

Marking：460N15NS；Package：TO-252AA；150V N-Channel Enhancement Mode MOSFET

Feature RDS(ON),VGS@10V,ID@20A

SVT4607SA

Marking：4607SA；Package：SOP-8-225-1.27；30V NP CHANNEL MOSFET

DESCRIPTION SVT4607SAisaN+PchannelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformanceandhighav

SVT4607SATR

Marking：4607SA；Package：SOP-8-225-1.27；30V NP CHANNEL MOSFET

DESCRIPTION SVT4607SAisaN+PchannelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformanceandhighav

3DD4601HT-O-T-B-A

Marking：4601HT；Package：TO-92；HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

3DD4601HT-O-T-N-C

Marking：4601HT；Package：TO-92；HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

3DD4601HT-R-T-B-A

Marking：4601HT；Package：TO-92；HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

AO4604

Marking：4604；Package：SO-8；Complementary Enhancement Mode Field Effect Transistor

AP4604I

Marking：4604；Package：TO-220CFM；N-CHANNEL ENHANCEMENT MODE POWER MOSFET