丝印：455；Package：SOT-23；Schottky BARRIER DIODE

DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. We declare that the material of product compliance with RoHS requirements. Features ● Low forward current ● Guard ring protected ● Low diode capacitance. APPLICATIONS ● Ultra high-speed switchin

文件：367.51 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：455；Package：SOT-23；Schottky BARRIER DIODE

DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. We declare that the material of product compliance with RoHS requirements. Features ● Low forward current ● Guard ring protected ● Low diode capacitance. APPLICATIONS ● Ultra high-speed switchin

文件：367.51 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：4558C；Package：SO-8；Wide bandwidth dual bipolar operational amplifier

Features ■ Internally compensated ■ Short-circuit protection ■ Gain and phase match between amplifier ■ Low power consumption ■ Pin-to-pin compatible with MC1458/LM358 ■ Gain bandwidth (at 100 kHz): 5.5 MHz Description The MC4558 is a high performance monolithic dual operational amplifie

文件：462.78 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：4558C；Package：SO-8；Wide bandwidth dual bipolar operational amplifier

Features ■ Internally compensated ■ Short-circuit protection ■ Gain and phase match between amplifier ■ Low power consumption ■ Pin-to-pin compatible with MC1458/LM358 ■ Gain bandwidth (at 100 kHz): 5.5 MHz Description The MC4558 is a high performance monolithic dual operational amplifie

文件：462.78 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：4558C；Package：TSSOP8；Wide bandwidth dual bipolar operational amplifier

Features ■ Internally compensated ■ Short-circuit protection ■ Gain and phase match between amplifier ■ Low power consumption ■ Pin-to-pin compatible with MC1458/LM358 ■ Gain bandwidth (at 100 kHz): 5.5 MHz Description The MC4558 is a high performance monolithic dual operational amplifie

文件：462.78 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：4558I；Package：SO-8；Wide bandwidth dual bipolar operational amplifier

Features ■ Internally compensated ■ Short-circuit protection ■ Gain and phase match between amplifier ■ Low power consumption ■ Pin-to-pin compatible with MC1458/LM358 ■ Gain bandwidth (at 100 kHz): 5.5 MHz Description The MC4558 is a high performance monolithic dual operational amplifie

文件：462.78 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：4558I；Package：SO-8；Wide bandwidth dual bipolar operational amplifier

Features ■ Internally compensated ■ Short-circuit protection ■ Gain and phase match between amplifier ■ Low power consumption ■ Pin-to-pin compatible with MC1458/LM358 ■ Gain bandwidth (at 100 kHz): 5.5 MHz Description The MC4558 is a high performance monolithic dual operational amplifie

文件：462.78 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：4555；Package：WLCSP12；SIM card interface level translator and supply voltage LDO

General description The NVT4555 device is built for interfacing a SIM card with a single low-voltage host side interface. The NVT4555 contains an LDO that can deliver two different voltages, 1.8 V or 2.95 V from typical mobile phone battery voltages up to 5.25 V and three level translators to

文件：578.61 Kbytes 页数：18 Pages

恩XP

丝印：4555；Package：WLCSP12；SIM card interface level translator and supply voltage LDO

General description The NVT4555 device is built for interfacing a SIM card with a single low-voltage host side interface. The NVT4555 contains an LDO that can deliver two different voltages, 1.8 V or 2.95 V from typical mobile phone battery voltages up to 5.25 V and three level translators to

文件：304.29 Kbytes 页数：19 Pages

恩XP

丝印：4558；Package：SOP-8；Dual Dperational Amplifier

文件：223 Kbytes 页数：2 Pages

KEXIN

科信电子