丝印：449；Package：SOT-23；NPN Silicon Planar Medium Power Transistor

FEATURES ● Low equivalent on-resistance,RCE(sat): 250mΩ at 1A. ● Complementary To FMMT549. APPLICATIONS ● NPN silicon planar medium power transistor.

文件：195.66 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：449；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES Low Equivalent On-Resistance

文件：1.36857 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：4490；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 16 A (VGS = 10V) ● RDS(ON)

文件：1.1865 Mbytes 页数：5 Pages

KEXIN

科信电子

丝印：4490；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 16 A (VGS = 10V) ● RDS(ON)

文件：1.5637 Mbytes 页数：5 Pages

KEXIN

科信电子

丝印：4496；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10 A (VGS = 10V) ● RDS(ON)

文件：1.72108 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：4496；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10 A (VGS = 10V) ● RDS(ON)

文件：2.03223 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：4496；Package：SO-8；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4496/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. AO4496 and AO4496L are electrically identical. -RoHS Compliant -AO4496L is Halogen Free Features VDS (V) = 3

文件：211.31 Kbytes 页数：5 Pages

AOSMD

万国半导体

丝印：4490；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 16 A (VGS = 10V) ● RDS(ON)

文件：1.1865 Mbytes 页数：5 Pages

KEXIN

科信电子

丝印：4490；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 16 A (VGS = 10V) ● RDS(ON)

文件：1.5637 Mbytes 页数：5 Pages

KEXIN

科信电子

丝印：4496；Package：SOP-8；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10 A (VGS = 10V) ● RDS(ON)

文件：1.72108 Mbytes 页数：4 Pages

KEXIN

科信电子