首页 >446LSLHTCP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
350VoltSurfaceMountFuse | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
FRS&PMRmobileradioapplications | ACT Advanced Crystal Technology | ACT | ||
SAWFilter | ACT Advanced Crystal Technology | ACT | ||
MobileRadioApplications | ACT Advanced Crystal Technology | ACT | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD446usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOD446isPb-free(meetsROHS&Sony259specifications).AOD4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel100V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=10A@TC=25℃ •DrainSourceVoltage- :VDSS=75V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=140mΩ(Max) •100avalanchetested •MinimumLot-to-L | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOD446usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOD446isPb-free(meetsROHS&Sony259specifications).AOD4 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
P-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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