丝印：4435；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The 4435 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.13444 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：4435；Package：SOP-8；P-Channel MOSFET

Description The enhancement mode MOS is extremely high density cell and low on-resistance.

文件：633.47 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

丝印：4435；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

文件：1.12376 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：4435；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

文件：201.36 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES @ Vos =-30Vio=-9A @ Ros(on = 20m@Ves=10V @ Ros(on = 35mO@Ves=4.5V

文件：2.88112 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES | @ Vos=-30Vjo= 9A | © Rosczmogesmioy | ® Ros(Ov=35mO@Ves=4.5V |

文件：2.886 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：4435GM；Package：SO-8；P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：202.58 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

丝印：4435GM；Package：SO-8；Simple Drive Requirement, Low On-resistance

文件：208.18 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

丝印：4435GYT；Package：PMPAK-83x3；Simple Drive Requirement, Small Size & Lower Profile

文件：101.03 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

丝印：4435；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The 4435 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.13444 Mbytes 页数：6 Pages

GOFORD

谷峰半导体