| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
CLEARTHRU-HOLESPACER | KEYSTONEKeystone Electronics Corp. Keystone公司Keystone Electronics有限公司 |  | ||
SafetyapplicationguideforSPC56xL70xxfamily | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | ||
60VN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | ||
N-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | ||
60VN-ChannelAlphaSGT | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | ||
N-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | ||
DDRClockOscillator | MaximMaximIntegrated 美信半导体 |  | ||
DDRClockOscillator | MaximMaximIntegrated 美信半导体 | | ||
DDRClockOscillator | MaximMaximIntegrated 美信半导体 | | ||
InsulatedGateBipolarTransistorwithUltrafastSoftRecoveryDiode Features LowVCE(ON)andSwitchingLosses 5.5µsShortCircuitSOA SquareRBSOA MaximumJunctionTemperature175°C PositiveVCE(ON)TemperatureCo-efficient Benefits HighEfficiencyinaWideRangeofApplications IncreasedReliability ExcellentCurrentSharingin | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | ||
InsulatedGateBipolarTransistorwithUltrafastSoftRecoveryDiode Features LowVCE(ON)andSwitchingLosses 5.5µsShortCircuitSOA SquareRBSOA MaximumJunctionTemperature175°C PositiveVCE(ON)TemperatureCo-efficient Benefits HighEfficiencyinaWideRangeofApplications IncreasedReliability ExcellentCurrentSharingin | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | ||
InsulatedGateBipolarTransistorwithUltrafastSoftRecoveryDiode | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
InsulatedGateBipolarTransistorwithUltrafastSoftRecoveryDiode Features LowVCE(ON)andSwitchingLosses 5.5µsShortCircuitSOA SquareRBSOA MaximumJunctionTemperature175°C PositiveVCE(ON)TemperatureCo-efficient Benefits HighEfficiencyinaWideRangeofApplications IncreasedReliability ExcellentCurrentSharingin | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
InsulatedGateBipolarTransistorwithUltrafastSoftRecoveryDiode Features LowVCE(ON)andSwitchingLosses 5.5µsShortCircuitSOA SquareRBSOA MaximumJunctionTemperature175°C PositiveVCE(ON)TemperatureCo-efficient Benefits HighEfficiencyinaWideRangeofApplications IncreasedReliability ExcellentCurrentSharingin | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
InsulatedGateBipolarTransistor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
InsulatedGateBipolarTransistor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
InsulatedGateBipolarTransistor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
3WMonauralPowerAmplifier Overview TheLA4266isa3Wpoweramplifierintendedfortelevisions. ThisIChasaseriesofpincompatiblemonauraland2-channelpoweramplifiers,thusallowstheendproducttouseacommoncircuitboad Features •Televisionaudiooutput. •PincompatiblewiththeLA4267(5W)/4268(10W) | SANYOSanyo 三洋三洋电机株式会社 |  | ||
SPDTRFSwitch | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 |  |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
22+ |
SOT223 |
163000 |
一级代理商现货保证进口原装正品假一罚十价格合理 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
SOT223 |
3020 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
INFINEON |
O7 |
TO223 |
1725 |
询价 | |||
23+ |
N/A |
90750 |
正品授权货源可靠 |
询价 | |||
INFINEON/英飞凌 |
SOT223 |
198589 |
假一罚十原包原标签常备现货! |
询价 | |||
INFINEON/英飞凌 |
23+ |
SOT223 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SIE |
22+ |
SOT223 |
25000 |
原装现货,价格优惠,假一罚十 |
询价 | ||
INFINEON/英飞凌 |
23+ |
SOT223 |
20000 |
原装正品 欢迎咨询 |
询价 | ||
SIE |
2023+ |
SOT223 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
INFINEON/英飞凌 |
23+ |
NA/ |
3020 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |
