Discrete IGBTs Silicon N-Channel IGBT

Features 1. 6.5th generation 2. The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. 3. Enhancement mode 4. High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 40 A) FWD : trr= 0.60 µs (typ.) (IF = 15 A) 5. Low saturation voltage : VC

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东芝

Discrete IGBTs Silicon N-Channel IGBT

Features 1. 6.5th generation 2. The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. 3. Enhancement mode 4. High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 40 A) FWD : trr= 0.60 µs (typ.) (IF = 15 A) 5. Low saturation voltage : VC

文件：230.28 Kbytes 页数：10 Pages

TOSHIBA

东芝

SOP-8

FM/富满

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TO-247

VISHAYVishay Siliconix

威世威世科技公司

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TO-247

VISHAYVishay Siliconix

威世威世科技公司

上传：深圳市恒星亚创科技有限公司