丝印：4003；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =40V,ID =3A RDS(ON) = 33mΩ @ VGS=10V(Typ) RDS(ON) = 52mΩ @ VGS=4.5V(Typ

文件：686.47 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：4003A；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4003A uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =40V,ID =3A RDS(ON) = 32mΩ @ VGS=10V(Typ) RDS(ON) = 43mΩ @ VGS=4.5V(Ty

文件：701.61 Kbytes 页数：7 Pages

NCEPOWER

新洁能

POWER DIVIDERS - THREE WAY, 1 TO 18 GHZ

FEATURES • Designed to Meet MIL-E-5400 Class 3 • SMA Female Connectors per MIL-PRF-39012 • High Isolation Wilkinson Circuit Design

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