丝印：40；Package：SOD-323；1-Line Bi-directional TVS Diode

Features  500W peak pulse power (8/20μs)  Protects one data or power line  Ultra low leakage: nA level  Operating voltage: 3.3V，5V, 8V, 12V, 15V, 24V, 36V, 40V  Ultra low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV C

文件：2.01557 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：40；Package：TSSOP6；General-purpose quadruple Schottky diode

1. General description General-purpose quadruple Schottky diode in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • AEC-Q101 qualified 3. Applica

文件：198.54 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：40；Package：TSSOP6；General-purpose quadruple Schottky diode

1. General description General-purpose quadruple Schottky diode in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance • Qualified according to AEC-Q101

文件：197.96 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：40；Package：SC74；LED Driver

1.1 Features • LED drive current preset to 10 mA • Continuous output current up to 150 mA with an external resistor • Easy paralleling of drivers to increase current • Supply voltage up to 40 V • Low side current control • Digital PWM input up to 10 kHz frequency (BCR 421U E6327) • Up to 1

文件：1.48864 Mbytes 页数：26 Pages

Infineon

英飞凌

丝印：40；Package：SOT416；NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit applications.

文件：402.61 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：40；Package：SOT416；NPN resistor-equipped transistors R1 = 4.7 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit applications. DESCRIPTION NPN resistor-equipped transistor (see “S

文件：402.59 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：40；Package：SOT-416；NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = open

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：92.31 Kbytes 页数：14 Pages

PHI

飞利浦

丝印：40；Package：SOT-416；NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：180.93 Kbytes 页数：14 Pages

恩XP

丝印：40；Package：SOD-323；1-Line Bi-directional TVS Diode

文件：766.36 Kbytes 页数：7 Pages

APMICROApplied Power Microelectronics Co.,Ltd.

应能江苏应能微电子股份有限公司

丝印：40；Package：SOT-26；LED Driver

文件：132.39 Kbytes 页数：12 Pages

Infineon

英飞凌