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型号：ASD40C；Package：SOD-323；1-Line Bi-directional TVS Diode

Features 500Wpeakpulsepower(8/20μs) Protectsonedataorpowerline Ultralowleakage:nAlevel Operatingvoltage:3.3V，5V,8V,12V,15V,24V, 36V,40V Ultralowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV C

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型号：BAS40XY；Package：TSSOP6；General-purpose quadruple Schottky diode

1.Generaldescription General-purposequadrupleSchottkydiodeinaverysmallSOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •AEC-Q101qualified 3.Applica

40

型号：BAS40XY-Q；Package：TSSOP6；General-purpose quadruple Schottky diode

1.Generaldescription General-purposequadrupleSchottkydiodeinaverysmallSOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101

40

型号：BCR420UE6327；Package：SC74；LED Driver

1.1Features •LEDdrivecurrentpresetto10mA •Continuousoutputcurrentupto150mAwithanexternalresistor •Easyparallelingofdriverstoincreasecurrent •Supplyvoltageupto40V •Lowsidecurrentcontrol •DigitalPWMinputupto10kHzfrequency(BCR421UE6327) •Upto1

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型号：PDTC143TE；Package：SOT416；NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitapplications.

40

型号：PDTC143TE；Package：SOT-416；NPN resistor-equipped transistors; R1 = 4.7 kOHM, R2 = open

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

PHI

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型号：PDTC143TE；Package：SOT-416；NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = open

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplif

ETC

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型号：PDTC143TE；Package：SOT416；NPN resistor-equipped transistors R1 = 4.7 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitapplications. DESCRIPTION NPNresistor-equippedtransistor(see“S

40

型号：ASD40C；Package：SOD-323；1-Line Bi-directional TVS Diode

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型号：BCR420U；Package：SOT-26；LED Driver