丝印：3W2；Package：DSBGA；TS5A12301E IEC Level 4 ESD-protected 0.75-Ω SPDT Analog Switch With 1.8-V Compatible Input Logic

1 Features 1• Low ON-State Resistance (0.75 Ω) • Low Charge Injection • Excellent ON-State Resistance Matching • Isolation in Power-Down Mode, VCC = 0 • Specified Break-Before-Make Switching • 2.25-V to 5.5-V Power Supply (VCC) • 6-MΩ Input Pulldown Allows Control Input (IN) to Be Unconnec

文件：620.55 Kbytes 页数：26 Pages

TI

德州仪器

丝印：3W2；Package：DSBGA；TS5A12301E IEC Level 4 ESD-protected 0.75-Ω SPDT Analog Switch With 1.8-V Compatible Input Logic

1 Features 1• Low ON-State Resistance (0.75 Ω) • Low Charge Injection • Excellent ON-State Resistance Matching • Isolation in Power-Down Mode, VCC = 0 • Specified Break-Before-Make Switching • 2.25-V to 5.5-V Power Supply (VCC) • 6-MΩ Input Pulldown Allows Control Input (IN) to Be Unconnec

文件：620.55 Kbytes 页数：26 Pages

TI

德州仪器

HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES

HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES ● Up to 250 ns max. recovery ● Small size ● Exceptionally low leakage ● Avalanche characteristics

文件：75.33 Kbytes 页数：2 Pages

EDI

HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES

HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES ● Up to 250 ns max. recovery ● Small size ● Exceptionally low leakage ● Avalanche characteristics

文件：75.33 Kbytes 页数：2 Pages

EDI