丝印：3T；Package：TSLP-10-3；Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

文件：121.11 Kbytes 页数：2 Pages

Infineon

英飞凌

丝印：3T；Package：TSLP-10-3；Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

文件：121.11 Kbytes 页数：2 Pages

Infineon

英飞凌

丝印：3T；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features • Input voltage range pack+: VSS – 0.3V to 12V • FET drive: – CHG and DSG FET drive output • Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) • Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 页数：34 Pages

TI

德州仪器

丝印：3T；Package：WSON；BQ297xx Cost-Effective Voltage and Current Protection Integrated Circuit for Single- Cell Li-Ion and Li-Polymer Batteries

1 Features • Input voltage range pack+: VSS – 0.3V to 12V • FET drive: – CHG and DSG FET drive output • Voltage sensing across external FETs for overcurrent protection (OCP) is within ±5mV (typical) • Fault detection – Overcharge detection (OVP) – Over-discharge detection (UVP) – Charge

文件：1.44954 Mbytes 页数：34 Pages

TI

德州仪器

丝印：3T；Package：DFN0603；Transient Voltage Suppressors for ESD Protection

Features Moisture Sensitivity Level (MSL-1) AEC-Q101 qualified Ultra small SMD package Ultra-Low capacitance Protects One Unidirectional I/O line Low clamping voltage Working voltage:3.3V Low leakage current IEC61000-4-2(ESD):±25kV (air discharge) ±20kV (contact discharge); Applicatio

文件：2.85923 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3T；Package：DFN0603；Transient Voltage Suppressors for ESD Protection

Features Ultra small SMD package Ultra-Low capacitance Protects One Unidirectional I/O line Low clamping voltage Working voltages :3.3V Low leakage current IEC61000-4-2(ESD):±25kV (air discharge) ±20kV (contact discharge); Applications USB 3.0 / USB 3.1 Interfaces HDMI 1.4 / HDMI 2.0

文件：3.00488 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3T；Package：DFN1006BD-2；Unidirectional ESD protection diode

1. General description Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with si

文件：230.08 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：3T；Package：SC-74；20 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Extended temperature range Tj = 175 °C • Very fast swit

文件：290.91 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：3T；Package：SOT1220；30 V, N-channel MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Small and leadless

文件：321.51 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：3T；Package：SLP1006P2T；Ultra-small package (1.0 x 0.6 x 0.4mm)

Description RailClamp is an ultra low capacitance Transient Voltage Suppressor (TVS) designed to protect high speed data interfaces. This device has been specifically designed to protect sensitive components which are connected to highspeed data and transmission lines from over-voltage cause

文件：292.57 Kbytes 页数：4 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司