3-phase inverter based on STSPIN32F0251

Features • Input voltage 什om 20 V to 120 V DC/AC • STD17NF25 MOSFETs power stage featuring: - VDS = 250 V - Ros(on)max.= 0.165 Q • Overcurrent threshold set to 16 Apeak • Dual footprint for IGBT/MOSFET package: 一 DPAK - PowerFlat 6x5 • Single-shunt current sensing, suitable for: - Sensor

文件：6.25984 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

丝印：1640；Package：SOT-89；Low voltage high performance NPN power transistor

文件：395.47 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Low voltage high performance NPN power transistor

This device is a NPN transistor manufactured using new low voltage planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage.\n • Very low collector-emitter saturation voltage\n• High current gain characteristic• Fast switching speed;

ST

意法半导体

Package：TO-243AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 6A SOT89

STMICROELECTRONICS

意法半导体