丝印：3N900；Package：TO-251；N-Channel ENHANCEMENT MODE MOSFET

Features Low Crss Low gate charge Fast switching Improved ESD capability 100% Avalanche Tested ROHS compliant Halogen-free Improved dv/dt capability

文件：622.61 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：3N900；Package：TO-252；N-Channel ENHANCEMENT MODE MOSFET

Features Low Crss Low gate charge Fast switching Improved ESD capability 100% Avalanche Tested ROHS compliant Halogen-free Improved dv/dt capability

文件：622.61 Kbytes 页数：6 Pages

RECTRON

丽正国际

3A, 900V N-CHANNEL POWER MOSFET

The UTC 3N90-E provides excellent RDS(ON), low gate chargeand operation with low gate voltages. This device is suitable foruse as a load switch or in PWM applications. • RDS(ON)<4.8Ω @VGS=10 V\n• Fast Switching Capability\n• Avalanche Energy Specified\n• Improved dv/dt Capability, High Ruggedness;

UTC

友顺

3 Amps, 900 Volts N-CHANNEL POWER MOSFET

The UTC 3N90Z provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON)=4.1Ω @VGS=10 V \n• Ultra Low Gate Charge ( typical 22.7 nC ) \n• Low Reverse Transfer Capacitance ( CRSS= Typical 13 pF ) \n• Fast Switching Capability \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness;

UTC

友顺

有源晶振

SJK

晶科鑫

包装：线轴 类别：电缆，电线 - 管理 螺线包材、伸缩套管 描述：SPIRAL WRAP 1/2\

HellermannTytonHellermann Tyton

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