N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：399.37 Kbytes 页数：9 Pages

UTC

友顺

TMOS POWER FET 3.0 AMPERES 600 VOLTS

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

文件：74.47 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS

文件：183.86 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N60E is supp

文件：79.82 Kbytes 页数：9 Pages

PHI

PHI