丝印：3N1012；Package：PG-TO220-3-1；OptiMOS-T Power-Transistor

Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：192.39 Kbytes 页数：9 Pages

Infineon

英飞凌

TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design als

恩XP

3.0A, 1000V N-CHANNEL POWER MOSFET

UTC

友顺

包装：散装 类别：连接器，互连器件 圆形连接器组件 描述：CONN PLUG MALE 4P GOLD SLDR CUP

3M

包装：散装 类别：连接器，互连器件 圆形连接器组件 描述：CONN PLUG MALE 4P GOLD SLDR CUP

3M