首页 >3DD301A>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=50V(Min) •Collector-EmitterSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=3A APPLICATIONS •DesignedforB/WTVverticaloutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=100V(Min) •Collector-EmitterSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=3A APPLICATIONS •DesignedforB/WTVverticaloutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=150V(Min) ·Collector-EmitterSaturationVoltage- :VCE(sat)=1.5V(Max)@IC=3A APPLICATIONS ·DesignedforB/WTVverticaloutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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