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3DD301B

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=50V(Min) •Collector-EmitterSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=3A APPLICATIONS •DesignedforB/WTVverticaloutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

3DD301C

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=100V(Min) •Collector-EmitterSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=3A APPLICATIONS •DesignedforB/WTVverticaloutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

3DD301D

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=150V(Min) ·Collector-EmitterSaturationVoltage- :VCE(sat)=1.5V(Max)@IC=3A APPLICATIONS ·DesignedforB/WTVverticaloutputapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

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