首页 >3DD4B>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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iscSiliconNPNPowerTransistor DESCRIPTION ·DCCurrentGain :hFE=15~180@IC=0.75A ·Collector-EmitterSustainingVoltage :VCEO(SUS)=250V(Min) ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforuseingeneralpurposepoweramplifierand switchingapplicatio | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·DCCurrentGain :hFE=15~180@IC=0.75A ·Collector-EmitterSustainingVoltage :VCEO(SUS)=300V(Min) ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforuseingeneralpurposepoweramplifierand switchingapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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