Silicon NPN Power Transistor

FEATURES · Low VCE(sat) · Small and slim package · Fast switching speed APPLICATIONS ·Power dissipation

文件：297.98 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

FEATURES · Low VCE(sat) · Small and slim package · Fast switching speed APPLICATIONS ·Power dissipation

文件：279.04 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

FEATURES · Low VCE(sat) · Small and slim package · Fast switching speed APPLICATIONS ·Power dissipation

文件：297.98 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

FEATURES · Low VCE(sat) · Small and slim package · Fast switching speed APPLICATIONS ·Power dissipation

文件：279.04 Kbytes 页数：3 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE= 15(Max) @IC= 0.3A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers

文件：293.2 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·High DC Current Gain : hFE= 10(MAX)@IC= 1.5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers

文件：291.6 Kbytes 页数：2 Pages

ISC

无锡固电

TO-251-3L Plastic-Encapsulate Transistors

文件：348.59 Kbytes 页数：2 Pages

JIANGSU

长电科技

TO-251 Plastic-Encapsulated Transistors

文件：53.55 Kbytes 页数：1 Pages

TEL

isc Silicon NPN Power Transistor

文件：335.12 Kbytes 页数：3 Pages

ISC

无锡固电

晶体管

JSCJ

长晶科技