3B

型号：AZ5323-01F；Package：DFN1006；1-CHANNEL ULTRA LOW CAPACITANCE ESD DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:3.3V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±25kV Contactdischarge:±20kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4A(8/20μs) RoHSCompliant

3B

型号：AZ5423-01F；Package：DFN1006；1-CHANNEL ULTRA LOW CAPACITANCE ESD DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:3.3V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±25kV Contactdischarge:±20kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4A(8/20μs) RoHSCompliant

3B

型号：BC856B；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES *Ideallysuitedforautomaticinsertion *ForSwitchingandAFAmplifierApplications

3B

型号：BC856B；Package：SOT-23；PNP general purpose Transistor

FEATURES ●Lowcurrent.(max.100mA) ●Lowvoltage.(max.65v) APPLICATIONS ●Generalpurposeswitchingandamplification.

3B

型号：BC856B；Package：SOT-23；Low current.(max.100mA)

FEATURES ●Lowcurrent.(max.100mA) ●Lowvoltage.(max.65v) APPLICATIONS ●Generalpurposeswitchingandamplification.

3B

型号：BC856B；Package：SOT-23；PNP general purpose Transistor

FEATURES ●Lowcurrent.(max.100mA). ●Lowvoltage.. APPLICATIONS ●Generalpurposeswitchingandamplification.

3B

型号：BC856B；Package：SOT-23；PNP Transistors

■Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

3B

型号：BC856B；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES *Ideallysuitedforautomaticinsertion *ForSwitchingandAFAmplifierApplications

3B

型号：BC856B；Package：SOT-23；Ideally suited for automatic insertion

FEATURE Ideallysuitedforautomaticinsertion ForSwitchingandAFAmplifierApplications

3B

型号：BC856BLT1G；Package：SOT-23；General Purpose Transistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.