丝印：3B；Package：DFN1006；1-CHANNEL ULTRA LOW CAPACITANCE ESD DIODE

Features Ultra low leakage: nA level Operating voltage: 3.3 V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±20kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 4A (8/20 μs) RoHS Compliant

文件：332.95 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：3B；Package：DFN1006；1-CHANNEL ULTRA LOW CAPACITANCE ESD DIODE

Features Ultra low leakage: nA level Operating voltage: 3.3 V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±20kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 4A (8/20 μs) RoHS Compliant

文件：332.95 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：3B；Package：SOT-23；PNP Transistors

■ Features ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications

文件：683.91 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：3B；Package：SOT-23；PNP general purpose Transistor

FEATURES ● Low current.(max.100mA). ● Low voltage.. APPLICATIONS ● General purpose switching and amplification.

文件：2.09285 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：3B；Package：SOT-23；PNP general purpose Transistor

FEATURES ● Low current.(max.100mA) ● Low voltage.(max.65v) APPLICATIONS ● General purpose switching and amplification.

文件：476.22 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：3B；Package：SOT-23；Low current.(max.100mA)

FEATURES ● Low current.(max.100mA) ● Low voltage.(max.65v) APPLICATIONS ● General purpose switching and amplification.

文件：679.55 Kbytes 页数：4 Pages

LEIDITECH

雷卯电子

丝印：3B；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications

文件：506.92 Kbytes 页数：4 Pages

UMW

友台半导体

丝印：3B；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications

文件：452.25 Kbytes 页数：4 Pages

UMW

友台半导体

丝印：3B；Package：SOT-23；Ideally suited for automatic insertion

FEATURE Ideally suited for automatic insertion For Switching and AF Amplifier Applications

文件：344.44 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：3B；Package：SOT-23；General Purpose Transistors

General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

文件：179.58 Kbytes 页数：8 Pages

FS