丝印：3A2；Package：SMA；Surface Mount Zener Diodes

文件：379.93 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：3A2；Package：DO214AA；Surface Mount Silicon Zener Diodes

文件：648.26 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：3A20；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3A22；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3A24；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3A26；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3A28；Package：DO-214AA；6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件：3.40045 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

丝印：3A2B；Package：VSSOP；INA241x-Q1 AEC-Q100, –5 V to 110 V, Bidirectional, Ultra-Precise Current Sense Amplifier With Enhanced PWM Rejection

1 Features • AEC-Q100 qualified for automotive applications: – Temperature grade 1: −40°C to +125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • Enhanced PWM rejection optimized for systems subject to switching common-mode voltages – Su

文件：2.85396 Mbytes 页数：39 Pages

TI

德州仪器

丝印：3A2B；Package：VSSOP；INA241x-Q1 AEC-Q100, –5V to 110V, Bidirectional, Ultra-Precise Current Sense Amplifier With Enhanced PWM Rejection

1 Features • AEC-Q100 qualified for automotive applications: – Temperature grade 1: −40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • Enhanced PWM rejection optimized for systems subject to switching common-mode voltages – Sup

文件：3.05997 Mbytes 页数：44 Pages

TI1

德州仪器

丝印：3A2B；Package：VSSOP；INA241x-Q1 AEC-Q100, –5V to 110V, Bidirectional, Ultra-Precise Current Sense Amplifier With Enhanced PWM Rejection

1 Features • AEC-Q100 qualified for automotive applications: – Temperature grade 1: −40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • Enhanced PWM rejection optimized for systems subject to switching common-mode voltages – Sup

文件：3.13099 Mbytes 页数：46 Pages

TI1

德州仪器