356 Series Card Edge Connector | Black | 0.156 (3.96mm) Centreline Spacing | 0.460 (11.68mm) Insulator Height

Features .156 (3.96mm) Contact Spacing with Single Centreline Row Accepts .062 (1.57mm) Nominal Thickness P.C. Board Low Profile Insulator Body, .460 (11.68mm) Contact Termination Options include P.C. Tail & Wire Hole Large Variety of Mounting Options Accepts between Contac

文件：478.37 Kbytes 页数：3 Pages

EDAC

亚得电子

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体