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ATG

Micropower, High Accuracy

文件：862.87 Kbytes 页数：20 Pages

AD

亚德诺

Micropower, High Accuracy

文件：862.87 Kbytes 页数：20 Pages

AD

亚德诺

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：308.98 Kbytes 页数：2 Pages

ISC

无锡固电