丝印：34A；1.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：105.93 Kbytes 页数：5 Pages

WTE

Won-Top Electronics

丝印：34A；Package：DO-214AC；SURFACE MOUNT SILICON ZENER DIODES

Vz : 3.0 - 300 Volts, Pd : 1 Watts Features ● Glass passivated chip ● Low leakage ● Built-in strain relief ● Low inductance ● High peak reverse power dissipation ● Lead (Pb)-free component ● For use in stabilizing and clipping with high power rating Mechanical Data ● Case: Molded pla

文件：271.25 Kbytes 页数：4 Pages

FS

丝印：34A；Package：SOD-123FL；1W Silicon Planar Zener Diodes

Features Glass passivated chip Built-in strain relief Low inductance High peak reverse power dissipation Low reverse leakage For use in stabilizing and clipping with high power rating RoHS compliant

文件：619.23 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：34A；Package：SOD-123FL；1.0W SURFACE MOUNT ZENER DIODE

Low Profile 1.33mm Max. Case Height 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Material – UL Recognition Flammability Classification 94V-0

文件：104.54 Kbytes 页数：5 Pages

WTE

Won-Top Electronics

丝印：34A；Package：SC70；TLV803E, TLV809E, TLV810E Low Power 250-nA IQ and Small Size Supply Voltage Supervisors

1 Features • Ensured RESET/RESET for VDD = 0.7 V to 6 V • Fixed time delay: 40 μs, 10 ms, 50 ms, 100 ms, 200 ms, 400 ms • Supply current (IDD): 250 nA (typical) – 1 μA (maximum for VDD = 3.3 V) • Output topology: – TLV809E: push-pull, active-low – TLV803E: open-drain, active-low – TLV810E

文件：2.16016 Mbytes 页数：48 Pages

TI

德州仪器

丝印：34A；Package：SC70；TLV803E, TLV809E, TLV810E Low Power 250-nA IQ and Small Size Supply Voltage Supervisors

1 Features • Ensured RESET/RESET for VDD = 0.7 V to 6 V • Fixed time delay: 40 μs, 10 ms, 50 ms, 100 ms, 200 ms, 400 ms • Supply current (IDD): 250 nA (typical) – 1 μA (maximum for VDD = 3.3 V) • Output topology: – TLV809E: push-pull, active-low – TLV803E: open-drain, active-low – TLV810E

文件：2.1656 Mbytes 页数：49 Pages

TI

德州仪器

丝印：34A；Package：SC70；TLV803E, TLV809E, TLV810E Low Power 250-nA IQ and Small Size Supply Voltage Supervisors

1 Features • Ensured RESET/RESET for VDD = 0.7 V to 6 V • Fixed time delay: 40 μs, 10 ms, 50 ms, 100 ms, 200 ms, 400 ms • Supply current (IDD): 250 nA (typical) – 1 μA (maximum for VDD = 3.3 V) • Output topology: – TLV809E: push-pull, active-low – TLV803E: open-drain, active-low – TLV810E

文件：2.16676 Mbytes 页数：49 Pages

TI

德州仪器

丝印：34A；Package：SC70(DCK)；TLV803E, TLV809E, TLV810E Low Power 250-nA IQ and Small Size Supply Voltage Supervisors

1 Features • Ensured RESET/RESET for VDD = 0.7 V to 6 V • Fixed time delay: 40 μs, 10 ms, 50 ms, 100 ms, 200 ms, 400 ms • Supply current (IDD): 250 nA (typical) – 1 μA (maximum for VDD = 3.3 V) • Output topology: – TLV809E: push-pull, active-low – TLV803E: open-drain, active-low – TLV810E

文件：2.24829 Mbytes 页数：52 Pages

TI

德州仪器

丝印：34A；Package：SC70(DCK)；TLV803E, TLV809E, TLV810E Low Power 250-nA IQ and Small Size Supply Voltage Supervisors

1 Features • Ensured RESET/RESET for VDD = 0.7 V to 6 V • Fixed time delay: 40 μs, 10 ms, 50 ms, 100 ms, 200 ms, 400 ms • Supply current (IDD): 250 nA (typical) – 1 μA (maximum for VDD = 3.3 V) • Output topology: – TLV809E: push-pull, active-low – TLV803E: open-drain, active-low – TLV810E

文件：2.24829 Mbytes 页数：52 Pages

TI

德州仪器

丝印：34A；Package：SMA；Surface Mount Zener Diodes

文件：261.35 Kbytes 页数：3 Pages

ANOVA

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