AM3401RA

P-Ch30VFastSwitchingMOSFETs

GENERALDESCRIPTION TheAM3401isthehighestperformancetrenchPchMOSFETswithextremehighcelldensitywhichprovideexcellentRDSONandgatechargeformostofthesmallpowerswitchingandloadswitchapplications. TheAM3401meettheRoHSandGreenProductrequirement,withfullfunc

AN3401

TheSPV1001andSPV1002aresystem-in-packagesolutions

AO3401

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3401usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardproductAO3401isPb-free(meetsROHS&Sony259spe

AO3401

30VP-ChannelEnhancementModeMOSFET

30VP-ChannelEnhancementModeMOSFET VDS=-30V RDS(ON),Vgs@-10V,Ids@-4.2A

AO3401

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO3401usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardproductKSM3401isPb-free(meetsROHS&Sony259sp

AO3401

30VP-ChannelMOSFET

AO3401

P-ChannelEnhancementModeFieldEffectTransistor

AO3401(4.2A)P-ChannelMOSFET P-ChannelEnhancementModeFieldEffectTransistor

AO3401

P-ChannelEnhancementModeMOSFET

Feature ●-30V/-4.2A,RDS(ON)=55mΩ(MAX)@VGS=-10V. RDS(ON)=70mΩ(MAX)@VGS=-4.5V. RDS(ON)=120mΩ(MAX)@VGS=-2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON) ●ReliableandRugged ●SOT-23forSurfaceMountPackage Applicati

AO3401

P-ChannelEnhancementMOSFET

■Features ●VDS(V)=-30V ●ID=-4.2A(VGS=-10V) ●RDS(ON)

AO3401

Plastic-EncapsulateMosfets

P-ChannelMOSFET FEATURES •TheAO3401usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V. •Thisdeviceissuitableforuseasaloadswitch orinPWMapplications.