零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
MutedetectorIC TheBA336,BA338andBA338LaremonolithicICsdesignedformutedetectionandtapeenddetection.Whenadurationofsilence(52dBmorless)exceedsthetimeconstantsetwithanexternalCRcircuit,asonggapisidentified,andafterthisaplungercontrolsignalisoutputduringapulsewhose | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
GeneralPurposeSi-EpitaxialPlanarTransistors | DiotecDIOTEC 德欧泰克 | Diotec | ||
SWITCHINGANDAMPLIFIERAPPLICATIONS SWITCHINGANDAMPLIFIERAPPLICATIONS FEATURES *SuitableforAF-Driverstagesandlowpoweroutputstages *ComplementtoUTCBC327/328 | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
AmplifierTransistors AmplifierTransistorsNPNSilicon Features •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications??? NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications | SEMTECH Semtech Corporation | SEMTECH | ||
SWITCHINGANDAMPLIFIERAPPLICATIONS SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC327/BC328 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SmallSignalTransistors(NPN) FEATURES ♦NPNSiliconEpitaxialPlanarTransistors forswitchingandamplifierapplications.Especially suitableforAF-driverstagesandlowpower outputstages. ♦Thesetypesarealsoavailablesubdi videdintothreegroups-16,-25,and-40, accordingtotheirDCcurrent | GE GE Industrial Company | GE | ||
EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •HighCurrent:IC=800mA. •DCCurrentGain:hFE=100~630(VCE=1V,Ic=100mA). •ForComplementarywithPNPtypeBC328. | KECKEC CORPORATION KEC株式会社 | KEC | ||
Si-EpitaxialPlanarTransistors GeneralPurposeSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92(10D3) •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack | DiotecDIOTEC 德欧泰克 | Diotec | ||
NPNSiliconAFTransistors(HighcurrentgainHighcollectorcurrentLowcollector-emittersaturationvoltage) ●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC327,BC328(PNP) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
AmplifierTransistor TheLM337isanadjustable3–terminalnegativevoltageregulatorcapableofsupplyinginexcessof1.5Aoveranoutputvoltagerangeof–1.2Vto–37V.Thisvoltageregulatorisexceptionallyeasytouseandrequiresonlytwoexternalresistorstosettheoutputvoltage.Further,itemploysi | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
NPNEpitaxialSiliconTransistor SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC327/BC328 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SwitchingandAmplifierApplications SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC327/BC328 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SWITCHINGANDAMPLIFIERAPPLICATIONS | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
NPNPlastic-EncapsulateTransistors FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.8A Collector-basevoltage V(BR)CBO:BC33750V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR | DCCOMDc Components 直流元件直流元件有限公司 | DCCOM | ||
NPNSiliconEpitaxialPlanarTransistor NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications Thesetypesaresubdividedintothreegroups-16, -25and-40,accordingtotheirDCcurrentgain. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | SEMTECH_ELEC | ||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.8A Collector-basevoltage VCBO:BC33750V BC33830V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
SWITCHINGANDAMPLIFIERAPPLICATIONS | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
EPITAXIALPLANARNPNTRANSISTOR | KECKEC CORPORATION KEC株式会社 | KEC |
详细参数
- 型号:
338B
- 制造商:
ILLINOISCAPACITOR
- 制造商全称:
Illinois Capacitor, Inc.
- 功能描述:
+85°C Non-Polar Radial Lead Aluminum Electrolytic Capacitors
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ADI/亚德诺 |
21+ |
原封装 |
13880 |
公司只售原装,支持实单 |
询价 | ||
ADI/亚德诺 |
2339+ |
NA |
32280 |
原装现货 假一罚十!十年信誉只做原装! |
询价 | ||
ADI/亚德诺 |
21+ |
原封装 |
13880 |
公司只售原装 支持实单 |
询价 | ||
ADI/亚德诺 |
22+ |
66900 |
原封装 |
询价 | |||
原厂 |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
询价 | ||
Illinois Capacitor- Inc. |
2022+ |
318 |
全新原装 货期两周 |
询价 | |||
Illinois |
1931+ |
N/A |
425 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
ILLINOIS |
20+ |
电容器 |
7926 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Illinois |
22+ |
NA |
425 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
CDE |
24+25+/26+27+ |
车规铝电解电容 |
9315 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
相关规格书
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- 338LBB035M2BC
- 338LBB050M2CC
- 338LBB063M2CD
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相关库存
更多- 338C/D DIE
- 338CKE016M
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- 338CKE050M
- 338CKH010M
- 338CKH025M
- 338CKR010M
- 338CKR035M
- 338CKS010M
- 338CKS025M
- 338CKS035MQW
- 338CKS6R3M
- 338D658
- 338D676G01
- 338DX1LP11000
- 338DX4LP11000
- 338DY-1LP14-000
- 338DY-2LP11-000
- 338DY4LP11000
- 338DZ2LP11000
- 338FP-M
- 338FXM016M
- 338FXM6R3M
- 338HSM010M
- 338HST010M
- 338JZM6R3M
- 338KBM016M
- 338KBM035M
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- 338KXM016MQV
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- 338LBA050M2BC
- 338LBA050M2CC
- 338LBA080M2CG
- 338LBA080M2ED
- 338LBA100M2FD
- 338LBB050M2BD
- 338LBB063M2BE
- 338LBB063M2DC
- 338LBB080M2CF
- 338LBB080M2EC
- 338LBB100M2DF
- 338LMB025M2BC
- 338LMB035M2CC