丝印：33012L6；Package：PG-TSDSON-8；OptiMOSTM 6 Power-Transistor, 120 V

Features • N-channel, logic level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

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