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33

型号:3.0SMC33;Package:DO-214AB;Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

33

型号:ASD33C;Package:SOD-323;1-Line Bi-directional TVS Diode

Features 500Wpeakpulsepower(8/20μs) Protectsonedataorpowerline Ultralowleakage:nAlevel Operatingvoltage:3.3V,5V,8V,12V,15V,24V, 36V,40V Ultralowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV C

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY

33

型号:BZX384-A12;Package:SOD323;Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A)tolerancerange.Theseries includes37breakdownvoltageswithnominalworkingvoltagesfrom2.4Vto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

33

型号:BZX384-A12;Package:SOD323;Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

33

型号:BZX384-A12-Q;Package:SC-76;Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

33

型号:CMZ33A;Package:3-4E1S;Zener Diode Silicon Epitaxial Planar

Applications •Surgeabsorber Features (1)Powerdissipation:PD=2W (2)Zenervoltage:Vz=12to51V (3)Theuseofsmall,thinsurface-mountpackageisoptimumwayforhigh-densitymounting. Nickname:M-FLATTM

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

33

型号:DTA143X;DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

ROHMRohm

罗姆罗姆半导体集团

ROHM

33

型号:DTA143XE;Package:SOT-523;PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Built-InBiasingResistors,R1=4.7kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy.

ROHMRohm

罗姆罗姆半导体集团

ROHM

33

型号:DTA143XE;Package:SOT-523;PNP -100mA -50V Digital Transistor

Features 1)Built-InBiasingResistors,R1=4.7kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy.

ROHMRohm

罗姆罗姆半导体集团

ROHM

33

型号:DTA143XE;Package:SOT-523;Digital transistors (built-in resistors)

Features 1)Built-InBiasingResistors,R1=4.7kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy.

ROHMRohm

罗姆罗姆半导体集团

ROHM
供应商型号品牌批号封装库存备注价格
YANGJIE
24+
SOD-123FL
50000
原厂直销全新原装正品现货 欢迎选购
询价
CJ(江苏长电/长晶)
23+
SOD-123FL
100000
原装现货、价格优势、可开发票
询价
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
询价
YANGJIE(扬杰)
24+
SOD123FL
50000
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
HIGH DIODE/海德
24+
NONE
60000
询价
扬州扬杰
两年内
NA
355
实单价格可谈
询价
JF
23+
SMAF
30000
代理全新原装现货,价格优势
询价
JF
23+
SMAF
50000
全新原装正品现货,支持订货
询价
JF
17+
SMAF
3000
询价
ision
19+
SOD-123FL
200000
询价
更多33供应商 更新时间2025-8-3 13:00:00