3.0SMC33

Marking：33；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

ASD33C

Marking：33；Package：SOD-323；1-Line Bi-directional TVS Diode

Features 500Wpeakpulsepower(8/20μs) Protectsonedataorpowerline Ultralowleakage:nAlevel Operatingvoltage:3.3V，5V,8V,12V,15V,24V, 36V,40V Ultralowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV C

BZX384-A12

Marking：33；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

BZX384-A12

Marking：33；Package：SOD323；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A)tolerancerange.Theseries includes37breakdownvoltageswithnominalworkingvoltagesfrom2.4Vto

BZX384-A12-Q

Marking：33；Package：SC-76；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX384-A),±2(BZX384-B)and approximately±5(BZX384-C)tolerancerange.Theseriesincludes37breakdownvol

CMZ33A

Marking：33；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications •Surgeabsorber Features (1)Powerdissipation:PD=2W (2)Zenervoltage:Vz=12to51V (3)Theuseofsmall,thinsurface-mountpackageisoptimumwayforhigh-densitymounting. Nickname:M-FLATTM

DTA143X

Marking：33；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

DTA143XE

Marking：33；Package：SOT-523；PNP -100mA -50V Digital Transistor

Features 1)Built-InBiasingResistors,R1=4.7kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy.

DTA143XE

Marking：33；Package：SOT-523；PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Built-InBiasingResistors,R1=4.7kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy.

DTA143XE

Marking：33；Package：SOT-523；Digital transistors (built-in resistors)

Features 1)Built-InBiasingResistors,R1=4.7kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesigneasy.