型号：3.0SMC33；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES For surface mounted applications in order tooptimize board space. Low profile package. Glass passivated junction. Low inductance. 3000W peak pulse power capability at 10x1000us waveform, repetition rate (duty cycles):0.01 Plastic package has Underwriters Laboratory Flammability.

文件：325.35 Kbytes 页数：5 Pages

佑风微电子

型号：ASD33C；Package：SOD-323；1-Line Bi-directional TVS Diode

Features  500W peak pulse power (8/20μs)  Protects one data or power line  Ultra low leakage: nA level  Operating voltage: 3.3V，5V, 8V, 12V, 15V, 24V, 36V, 40V  Ultra low clamping voltage  Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV C

文件：2.01557 Mbytes 页数：7 Pages

顺烨电子

型号：BZX384-A12；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：320.93 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BZX384-A12；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A) tolerance range. The series includes 37 breakdown voltages with nominal working voltages from 2.4 V to

文件：302.42 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BZX384-A12-Q；Package：SC-76；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：306.61 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：CMZ33A；Package：3-4E1S；Zener Diode Silicon Epitaxial Planar

Applications • Surge absorber Features (1) Power dissipation : PD = 2W (2) Zener voltage : Vz = 12 to 51V (3) The use of small, thin surface-mount package is optimum way for high-density mounting. Nickname: M-FLATTM

文件：266.72 Kbytes 页数：6 Pages

东芝

型号：DTA143X；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

罗姆

型号：DTA143XE；Package：SOT-523；Digital transistors (built-in resistors)

Features 1) Built-In Biasing Resistors, R1 = 4.7kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy.

文件：90.47 Kbytes 页数：4 Pages

罗姆

型号：DTA143XE；Package：SOT-523；PNP -100mA -50V Digital Transistor

Features 1) Built-In Biasing Resistors, R1 = 4.7kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy.

文件：1.81491 Mbytes 页数：14 Pages

罗姆

型号：DTA143XE；Package：SOT-523；PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Built-In Biasing Resistors, R1 = 4.7kΩ, R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy.

文件：1.54224 Mbytes 页数：11 Pages

罗姆