Silicon N Channel IGBT High Speed Power Switching

1. Trench gate technology (G5H series) 2. Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ 3. High speed switching tf = 150 ns typ 4. Low leak current ICES= 1 μA max 5. Isolated package TO-220FL

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Silicon N Channel IGBT / High Speed Power Switching

•  Trench gate technology (G5H series)\n\n•  Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ\n\n•  High speed switching  tf = 150 ns typ\n\n•  Low leak current  ICES= 1 μA max\n\n•  Isolated package TO-220FL\n

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MEDIUM POWER SWITCHING USE INSULATED TYPE

MEDIUM POWER SWITCHING USE INSULATED TYPE • IC Collector current .......................... 30A • VCEX Collector-emitter voltage ......... 1000V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION

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Mitsubishi

三菱电机

Silicon N Channel IGBT High speed power switching

Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 μA max. ● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.

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Silicon N Channel IGBT High Speed Power Switching

1. Trench gate technology (G5H series) 2. Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ 3. High speed switching tf = 150 ns typ 4. Low leak current ICES= 1 μA max 5. Isolated package TO-220FL

文件：158.83 Kbytes 页数：7 Pages

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