丝印：2WM；Package：SOD-123；SOD-123 Plastic-Encapsulate Zener Diodes

Features Planar Die Construction 350mW Power Dissipation on Ceramic PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes Available in Lead Free Version

文件：2.74243 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：2WM；SOD-323 Plastic-Encapsulate Diodes

ZENER DIODE FEATURE ● Planar Die Construction ● General Purpose, Medium Current ● Ideally Suited for Automated Assembly Processes ● Available in Lead Free Version

文件：1.16398 Mbytes 页数：5 Pages

TGS

丝印：2WM；Package：SOD-323；SOD-323 Plastic-Encapsulate Zener Diodes

Features Planar Die Construction General Purpose, Medium Current 200mW Power Dissipation On Ceramic PBC Ideally Suited for Automated Assembly Processes Available in Lead Free Version

文件：2.71065 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：2WM；Package：SOD-323；200mW, 2.4V - 75V Surface Mount Zener Diode

FEATURES ●AEC-Q101 qualified ●Zener voltage range selection: 2.4V to 75V ●VZ tolerance selection of ± 2% ●Ideally suited for automated assembly processes ●Moisture sensitivity level: level 1, per J-STD-020 ●RoHS Compliant ●Halogen-free APPLICATIONS ●General regulation functions

文件：523.01 Kbytes 页数：6 Pages

TSC

台湾半导体

丝印：2WM；Package：SOD323；Small Signal Zener Diodes

Features ● Epoxy meets UL-94 V-0 flammability rating and halogen free ● Moisture Sensitivity Level 1 ● Zener Voltage 3.6V~47V ● VZ-tolerance ±2 approximately ● Part no. with suffix “Q” means AEC-Q101 qualified Applications ● General regulation functions

文件：276.53 Kbytes 页数：5 Pages

YANGJIE

扬杰电子

丝印：2WM；Package：SOD-123；PLASTIC-ENCAPSULATE ZENER DIODE

文件：1.04638 Mbytes 页数：6 Pages

NIUHANG

纽航电子

丝印：2WM；Surface Mount Zener Diodes

文件：299.97 Kbytes 页数：3 Pages

SECELECTRONICS

上优电子

丝印：2WM；Package：SOD123；Small Signal Zener Diodes

文件：275.48 Kbytes 页数：5 Pages

YANGJIE

扬杰电子

丝印：2WM5；Package：SSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

1FEATURES 2• Available in Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 5.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：750.39 Kbytes 页数：22 Pages

TI

德州仪器

丝印：2WM5；Package：SSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

1FEATURES 2• Available in Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 5.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：750.39 Kbytes 页数：22 Pages

TI

德州仪器