2KV Diode, Axial Leaded Fast Recovery Rectifier Diodes

Description Quick reference data VR = 2000V IR = 1uA trr = 150ns VF = 3.5V at IF = 2A Features ◆ Low reverse leakage current ◆ Hermetically sealed. ◆ Good thermal shock resistance ◆ Low forward voltage drop ◆ Metallurgically bonded, CAT 1 Bond.

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SEMTECH

先之科

Half Wave Rectifier Diode - 2000V Axial Leaded (Fast Recovery)

VR = 2000VIR = 1uAtrr = 150nsVF = 3.5V at IF = 2A • Low reverse leakage current\n• Good thermal shock resistance\n• Metallurgically bonded, CAT 1 Bond;

Semtech

先之科

General purpose (dual digital transistors)

surface mounting type

文件：83.58 Kbytes 页数：4 Pages

ROHM

罗姆

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Two DTC144Es chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. Application INVERTER, INTERFAC

文件：482.03 Kbytes 页数：8 Pages

ROHM

罗姆

General purpose (dual transistors)

General purpose (dual transistors) Features 1) Two 2SA1037AK chips in a EMT or UMT or SMT package.

文件：67.88 Kbytes 页数：3 Pages

ROHM

罗姆