Field Effect Transistor

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NEC

瑞萨

CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR

DESCRIPTION The 25K998 s designed for use in RF Amplifier and RF mixer. FEATURES - High Gain, High Iysly 137 mSTYP. (Vos =10V, Vgs =0, f = 1.0 kHz) - High Frequency Wide Band Amp.

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RENESAS

瑞萨

CONCEPT

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模块

Power Integrations

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