Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,power switch and solenoid drive Application High speed power switching

文件：41.68 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,power switch and solenoid drive Application High speed power switching

文件：41.68 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：41.51 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features 1. Low on-resistance 2. High speed switching 3. Low drive current 4. 4 V gate drive device  - Can be driven from 5 V source 5. Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：75.66 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

Features 1. Low on-resistance 2. High speed switching 3. Low drive current 4. 4 V gate drive device  - Can be driven from 5 V source 5. Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：75.66 Kbytes 页数：7 Pages

RENESAS

瑞萨

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丝印：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

文件：266.62 Kbytes 页数：2 Pages

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文件：1.00193 Mbytes 页数：8 Pages

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文件：116.13 Kbytes 页数：7 Pages

RENESAS

瑞萨