FIELD-EFFECT TRANSISTOR

DESCRIPTION 2SK930 is a super mini outline resin sealed silicon N channel junction type FET. It is designed for low frequency voltage amplifiy, application, analog switch application. APPLICATION General purpose voltage amplify, analog switch circuit for stereo, cassette deck, VCR.

文件：226.46 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

High-Frequency Low-Noise Amp Applications

Features • Adoption of FBET process • Large | yfs | • Small Ciss • Ultralow noise figure • Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmer Applications • AM tuner RF amplifier, low-noise amplifier

文件：78.57 Kbytes 页数：3 Pages

SANYO

三洋

High-Frequency General-Purpose Amp Applications?

High-Frequency General-Purpose Amplifier Applications Features · Adoption of FBET process. · Large |yfs|. · Small Ciss.

文件：70.8 Kbytes 页数：3 Pages

SANYO

三洋

FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNTION TYPE

文件：179.3 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE

文件：223.88 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNTION TYPE

文件：179.3 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

N-Channel JFET

文件：763.07 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

High-Frequency Low-Noise Amplifi er Applications

文件：335.7 Kbytes 页数：6 Pages

SANYO

三洋

N-Channel JFET

文件：763.07 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

High-Frequency Low-Noise Amplifi er Applications

文件：335.7 Kbytes 页数：6 Pages

SANYO

三洋