MOS FIELD EFFECT POWER TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET INDUSTRIAL USE FEATURES ● Suitable for switching power supplies, actuater controls, and pulse circuits. ● Low Ciss ● No second breakdown ● 4 V Gate Drive - Logic level -

文件：290.68 Kbytes 页数：4 Pages

NEC

瑞萨

N-Channel 100 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 UIS tested APPLICATIONS • Primary side switch

文件：1.99475 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

MOS Field Effect Power Transistors

MOS Field Effect Power Transistors

文件：110 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

MOS Field Effect Power Transistors

MOS Field Effect Power Transistors

文件：110 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon N-Channel MOS FET

For switching ■Features ●Low ON-resistance RDS(on) ●High-speed switching ●Allowing to be driven directly by CMOS and TTL

文件：34.18 Kbytes 页数：2 Pages

Panasonic

松下

For switching

For switching ■Features ●Low ON-resistance RDS(on) ●High-speed switching ●Allowing to be driven directly by CMOS and TTL

文件：74.14 Kbytes 页数：3 Pages

Panasonic

松下

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET For switching ■ Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

文件：35.69 Kbytes 页数：2 Pages

Panasonic

松下

Drain Source Voltage-: VDSS= 400V(Min)

文件：64.51 Kbytes 页数：2 Pages

ISC

无锡固电

Fast Switching Speed

文件：58.86 Kbytes 页数：2 Pages

ISC

无锡固电

Drain Source Voltage-: VDSS= 800V(Min)

文件：67.32 Kbytes 页数：2 Pages

ISC

无锡固电