N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

DESCRIPTION The 2SK591 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp drivers. FEATURES ● 4 V Gate Drive - Logic level - ● Low RDS(on) ● No Second Breakdown

文件：126.21 Kbytes 页数：3 Pages

NEC

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.055Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：323.25 Kbytes 页数：2 Pages

ISC

无锡固电

2SK595

2SK595

文件：40.99 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

CAPACITOR MICROPHONE APPLICATIONS

Capacitor Microphone Applications Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic • Adoption of FBET process

文件：436.07 Kbytes 页数：6 Pages

SANYO

三洋

丝印：596S；Package：SPA；JFET 20V, 150 to 350μA, 1.0mS, N-Channel

Features • Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1kW, Cin=15pF, VIN=0V, A curve) • Especiallysuited for use in condenser microphone for audio equipments and telephones • Excellent transient characteristic • Adoption of FBET process

文件：985.33 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

JFET 20V, 150 to 350μA, 1.0mS, N-Channel

Features • Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1kW, Cin=15pF, VIN=0V, A curve) • Especiallysuited for use in condenser microphone for audio equipments and telephones • Excellent transient characteristic • Adoption of FBET process

文件：985.33 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-Channel JFET

N-Channel JFET 20V, 140 to 350μA, 1.0mS, SPA Features • Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1kΩ, Cin=15pF, VIN=0V, A curve) • Especiallysuited for use in condenser microphone for audio equipments and telephones • Excellent transient characteristic • Adoption of FBET proc

文件：213.43 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

JFET 20V, 150 to 350μA, 1.0mS, N-Channel

Features • Low output noise voltage : VNO=--110dB max (VCC=4.5V, RL=1kW, Cin=15pF, VIN=0V, A curve) • Especiallysuited for use in condenser microphone for audio equipments and telephones • Excellent transient characteristic • Adoption of FBET process

文件：985.33 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

2SK595

未知品牌

MOSFET/场效应管

BlueRocket

蓝箭电子