TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：199.98 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：K4111；Package：SC-67；Switching Regulator Applications

Features • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：246.18 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：K4112；Package：SC-67；Switching Regulator Applications

Features • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward transfer admittance: |Yfs| = 5.5S (typ.) • Low leakage current: IDSS = 100μA (VDS = 600 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

文件：215.27 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：K4113；Package：SC-67；Switching Regulator Applications

Features • Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

文件：218.54 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 1.6 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 720 V) • Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

文件：151.49 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.

文件：56.42 Kbytes 页数：5 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.

文件：56.22 Kbytes 页数：5 Pages

SANYO

三洋

iscN-Channel MOSFET Transistor

文件：326.3 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：324.35 Kbytes 页数：2 Pages

ISC

无锡固电