首页 >2SK3899-ZKMOS(场效应管)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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MOSFieldEffectTransistor MOSFieldEffectTransistor Features LowOn-stateresistance RDS(on)1=5.3mÙMAX.(VGS=10V,ID=42A) RDS(on)2=6.5mÙMAX.(VGS=4.5V,ID=42A) LowCiss:Ciss=5500pFTYP. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3899isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=10V,ID=42A) RDS(on)2=6.5mΩMAX.(VGS=4.5V,ID=42A) •LowCiss:Ciss=5500pFTYP. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3899isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=10V,ID=42A) RDS(on)2=6.5mΩMAX.(VGS=4.5V,ID=42A) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3899isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=10V,ID=42A) RDS(on)2=6.5mΩMAX.(VGS=4.5V,ID=42A) | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3899isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=5.3mΩMAX.(VGS=10V,ID=42A) RDS(on)2=6.5mΩMAX.(VGS=4.5V,ID=42A) •LowCiss:Ciss=5500pFTYP. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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