isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 74A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：327.85 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 74A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 13mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：401.55 Kbytes 页数：2 Pages

ISC

无锡固电

General-Purpose Switching Device Applications

文件：103.83 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

N-Channel Silicon MOSFET General-Purpose Switching Device

• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC converter. • Avalanche resistance guarantee.

文件：44.45 Kbytes 页数：4 Pages

SANYO

三洋