2SK3815S资料使用说明书批发供应无锡固电-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SK3815S	文件：401.4 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：401.4 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
2SK3815	文件：40.36 Kbytes Page：4 Pages	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC converter. • Avalanche resistance guarantee. 文件：40.36 Kbytes 页数：4 Pages	SANYO 三洋	SANYO
2SK3815	文件：63.81 Kbytes Page：5 Pages	N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：63.81 Kbytes 页数：5 Pages	SANYO 三洋	SANYO
2SK3815L	文件：327.7 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 55mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：327.7 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多2SK3815S供应商更新时间2026-1-27 10:04:00