2SK3814-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3814isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=8.7mΩMAX.(VGS=10V,ID=30A) RDS(on)2=10.5mΩMAX.(VGS=4.5V,ID=30A) •LowCiss:Ciss=5450pF

2SK3814-Z

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8.7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

2SK3814-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3814isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=8.7mΩMAX.(VGS=10V,ID=30A) RDS(on)2=10.5mΩMAX.(VGS=4.5V,ID=30A)

2SK3814

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3814isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=8.7mΩMAX.(VGS=10V,ID=30A) RDS(on)2=10.5mΩMAX.(VGS=4.5V,ID=30A) •LowCiss:Ciss=5450pF

2SK3814

MOSFieldEffectTransistor

Features LowOn-stateresistance RDS(on)1=8.7mΩMAX.(VGS=10V,ID=30A) RDS(on)2=10.5mΩMAX.(VGS=4.5V,ID=30A) LowCiss:Ciss=5450pFTYP.

2SK3814

N-Channel60V(D-S)MOSFET

2SK3814

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8.7mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

2SK3814

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3814isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=8.7mΩMAX.(VGS=10V,ID=30A) RDS(on)2=10.5mΩMAX.(VGS=4.5V,ID=30A)