isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：401.63 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state

文件：77.74 Kbytes 页数：8 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V

文件：217.91 Kbytes 页数：10 Pages

RENESAS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：401.64 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.FEATURES\n•4.5 V drive available\n•Low on-state resistance\n  RD •4.5 V drive available\n•Low on-state resistance\n  RDS(on)1= 4.0 mΩMAX. (VGS= 10 V, ID= 42 A)\n•Low gate charge\n  QG= 68 nC TYP. (VDD= 16 V, VGS= 10 V, ID= 83 A)\n•Surface mount device available;

Renesas

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